A Novel DES Encryption Circuit Based on RRAM XOR Gates

In this paper, an XOR logic gate circuit based on the resistive random-access memory (RRAM) is developed, and the conventional complementary metal-oxide-semiconductor (CMOS) XOR gates in Date Encryption Standard (DES) encryption circuitry are replaced with RRAM XOR gates. This work is the first to apply the RRAM to cryptographic circuits, showcasing the feasibility of leveraging novel non-volatile memories (NVMs) to realize data encryption. Relative to conventional encryption circuit, the proposed circuitry has a significant advantage in terms of hardware circuit area, achieving an impressive reduction of over 11.43%.