The Influence of Mechanical Strains and Quantum-Size Effects on the Photosensitivity of Ge/Ge(x)Si(1-x) Nanofilm

Calculations of the maximum light wavelength of intrinsic absorption for the unstrained and strained germanium nanofilm were carried out. It was established that the photosensitivity of such nanofilm with the thickness of d 10 nm significantly depends on the effects of dimensional quantization and the magnitude of internal mechanical strains. It is shown that the variation of the thickness of the germanium nanofilm and the component composition of the Ge(x)Si(1–x) substrate allow controlling by its photosensitivity in the range from 0.8 to 4 μm.