Aging mechanisms of broad area high-power ~800nm laser diodes

The effect of oxygen defects on the gradual degradation rates of power and nonradiative carrier recombination in ~800 nm laser diodes was studied experimentally. While intentional introduction of oxygen at low levels (<5×10^15 cm^-3) was observed to degrade lasing performance prior to aging, no variation in gradual degradation rate of lasing power was observed. This suggests that degradation in these devices is not due to nonradiative recombination at low levels of point defects. Simulation of our data indicates that the power degradation may arise from increased intracavity absorption.