Extended InGaAs PIN photodiode with improved linearity for FTIR spectroscopy

In this paper we discuss the performance of a new generation of extended InGaAs photodetectors, the IG26H series, with a 2.6 μm wavelength cut off developed by the Laser Components Detector Group. These devices have a low leakage current over a wide range of applied reverse bias voltage and also have a high shunt resistance of 15 kOhms for 0 Volt bias applications. These photodetectors allow for the device operation up to 5 Volts reverse bias while maintaining low leakage of under 50 μAmp for a 1mm diameter active area detector thus assuring linearity of the operation of the detectors.