Strategies for the simulation of nanostructured optoelectronic devices

Towards a multiscale model of nanostructured optoelectronic devices, we have proposed a nonequilibrium Green's function approach, with intraband scattering self-energies computed in the self-consistent Born approximation, and interband self-energies (Shockley-Read-Hall and optical transitions) included in terms of semiclassical generation-recombination rates. This model provides a quantum-kinetic description of tunneling, miniband transport, hopping, and carrier extraction in terms of quasi-Fermi levels and electric fields, germane to the drift-diffusion framework. Another innovative aspect of the model is the numerical evaluation of functional derivatives, which led us to the development of small-signal AC NEGF model of dissipative carrier transport in semiconductor nanostructures.