A 240 GHz dielectric resonator antenna is designed in the back-end-of-line (BEOL) of a 130 nm SiGe BiCMOS process. The radiating structure made up of high-resistivity silicon, is aperture-coupled fed by a microstrip feedline. The antenna operates from 231 GHz to 250 GHz at its fundamental mode TE111 and has a realized gain of 5.1 dBi.
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Bashir et al. (2024) studied this question.
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