Molecular beam epitaxy based growth of GaSb quantum dots on silicon substrates

In this investigation, two techniques of epitaxial growth of GaSb quantum dots on silicon substrates are explored. The first method involves the direct nucleation of GaSb islands on the Silicon (100) substrate and an AlSb barrier layer. The second method combines selective-area epitaxy (SAE) with Vapor-Liquid-Solid (VLS) growth principles in order to achieve suitable growth temperatures for antimonides. Our analysis focuses on the presence of pseudomorphic strain due to the high mismatch in lattice constant between the dots and the substrate. Transmission electron microscopy and photoluminescence spectroscopy are used to characterize the dots analyzed in these studies.