The basic characteristics of group-III nitride films prepared by pulsed sputtering have been investigated. We have found that films prepared by sputtering shows high electron and hole mobilities. We have also found that Heavily donor-doped GaN and AlGaN showed record low resistivity. and were successfully applied to various devices such as the source/drain of AlN/AlGaN HEMTs and tunnel contacts for optical devices.
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Fujioka et al. (2024) studied this question.
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