Design and Simulation of a Novel Avalanche Photodiode Utilizing Field Effect Diode Structure

This research introduces a novel avalanche photodiode that addresses certain issues in existing avalanche photodiodes. The proposed device combines a basic pin-photodiode and a field effect diode, along with a multiplication layer. Through simulations, it has exhibited favorable optical and electrical characteristics. These include a responsivity of 71.2 A/W, an efficiency of 73.5%, a detectivity of 2×10 10 √(cm.Hz)/W, and a low noise equivalent power of 7×10 –14 W/√Hz. The device demonstrates peak responsivity at a wavelength of approximately 450 nm, indicating its potential as an optical detector for visible light applications.