Tweaking the Non–Volatile Write–Once–Read–Many–Times (WORM) Memory using Donor‐Acceptor Architecture with Isatin as Core Acceptor

Organic memory devices have attracted attention because they promise flexible electronics, low manufacturing costs, and compatibility with large-scale integration. A series of new D-A architectures were synthesized employing different donor groups and the isatin moiety as the acceptor through Suzuki-Miyaura coupling reactions. Strong intramolecular interactions were observed in the synthesized compounds, further corroborated by an optimal bandgap. The SEM investigation confirmed good molecular ordering and superior thin film surface coverage. All the compounds demonstrated notable binary Write-Once-Read-Many-Times (WORM) memory behaviour. The threshold switching voltage for these D-A systems ranged from -0.79 to -2.37 V, with the compound having isobutyl substituent showing the lowest threshold voltage and maximum ON/OFF ratio of 10