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March 3, 2024

Ferroelectric Gate Stack Engineering with Tunnel Dielectric Insert for Achieving High MemoryWindow in FEFETs for NAND Applications

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DDDipjyoti DasHPHyeonwoo ParkZWZekai Wang

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Das et al. (2024) studied this question.

synapsesocial.com/papers/68e75ef0b6db6435876d5a58https://doi.org/10.1109/edtm58488.2024.10511400
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