The discovery of ferroelectricity in hafnium oxide (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) has proved to be a game changer in the potential applications of ferroelectric non-volatile memories (NVM) in mainstream electronics. This paper discusses the present status, potential, and challenges facing ferroelectric field effect transistor (FeFET) memories and sketches promising technology evolution for the next decade and the most exciting applications.
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De et al. (2024) studied this question.
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