Characterization and Experimental Validation of Self Heating in RF LDMOS Transistor using BSIM-BULK Model

The article presents the self-heating (SH) characterization and experimental validation of RF bulk Lateral Double-Diffused Metal Oxide Semiconductor (LDMOS) transistor. It provides a detailed investigation of the thermal and electrical properties of RF Bulk LDMOS technology. Through extensive analysis, we examine the temperature increase due to SH in LDMOS transistor. For this simulation-based thermal analysis, we utilize fourth order thermal network under the framework of industry-standard Berkeley Short-channel IGFET (BSIM)-BULK model.