Feedback-based Selective Attenuated Phase Shift Mask for Improved Resist Profile Generation in Optical Lithography

This paper presents the idea of using a feedback-based selective approach to tag critical polygons in a semiconductor mask. As critical polygons are more prone to defects during wafer fabrication so in the analysis, tagged polygons are made using the Attenuated Phase Shift Mask while the non-critical polygons are made using the Binary Mask. Utilizing this approach results in selective intensity modulation at various critical regions more prone to defects. The defects in the region can be controlled and better resist contours can be generated.