Probing the Origin of Photocurrent in 2D Bilayer MoSe₂-WSe₂ Lateral Heterostructure

We use a simple and robust water-assisted one-pot CVD method to demonstrate the fabrication of electronic-grade bilayer 2D MoSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> lateral heterostructures (LHS). Using photoluminescence spectroscopy and transport measurements in 2D- LHS-based FET geometry, we evaluated the nature of majority charge carriers, mobility, transconductance, carrier density, diode and phototransistor performance as a function of gate voltage and laser exposure. These 2D LHS with type-II band alignment, precise interface, and atomic thickness present promising avenues for diverse optoelectronic applications.