Pr₁₋ₓCaₓMnO₃(PCMO(x)) is a popularly explored material for the resistive random access memory (RRAM) application. The oxygen vacancy migration in PCMO(x) is pivotal for resistive switching. In the present work, the first principles calculations are performed to predict the stability of charged oxygen vacancy and its migration dynamics in Pr0.5 Ca0.5 MnO₃. The oxygen vacancy migration calculations yield activation energies, ranging in 0.68-1.14 eV, which will improve our understanding towards the doping impacted oxygen migration in PCMO(x)-RRAMs.
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Inge et al. (2024) studied this question.
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