Performance improvement of trap charge infused MoS₂ based TFET photosensor by dielectric engineering.

In this study, we introduce a technique to improve the mobility in single layer MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> when used in a TFET based photosensor in the presence of a high level of interface trap charges. We investigated that the use of high-k materials in proximity to MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and the use of low-k materials in proximity to Si based photo gate can improve the performance of the photo sensor. Further, the impact of different dielectric materials when trap charges are present at the interfaces has been explored on device performance characteristics such as ON/OFF current ratio, average subthreshold swing, responsivity, and quantum efficiency.