Influence of ALD pulse times and deposition temperature on electrical properties and reliability of MIM decoupling capacitors based on Al-doped ZrO₂ high-κ dielectric in BEoL conditions

This paper explores the impact of important ALD parameters, especially of precursor/reactant pulse times as well as of deposition temperature and the combination of them on the electrical performance and reliability of MIM decoupling capacitors with thin high-κ dielectric films based on amorphous Al-doped ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> processed under BEoL-friendly conditions. Specifically, it examines key parameters like capacitance density (C₀=9.3 nF / mm²., κ=23.9) and field linearity (α=565 ppm /(MV / cm)²). It also assesses lifetime characteristics (tBD 150∘ C=3.6 · 10¹⁰ ~s), while shedding light on the dominant conduction mechanism.