Ultrasensitive Photo-Thermal Multimodal Sensory based on Self-Doping Modulation of Bi₂O₂Se Semiconductor

Herein, high-performance photo-thermal multimodal sensors based on novel two-dimentional layered Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Se semiconductor were demonstrated, wherein the electron mobility exceeded 175 ~cm² ~V⁻¹ ~s⁻¹ at room temperature, the photoresponsivity achieved 5 × 10⁵ A/W, the specific detectivity attained the order of 10 12 Jones, and the temperature sensitivity reached 2.5%/K. The integrated superior capability of photo- and thermal sensory is attributed to the self-doping modulation of Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Se, which facilitates the carrier transport within [Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ] 2+ interlayers. This work offers a promising route to develop novel multimodal sensors in single-device level.