Probing impact on magnetic behavior of cobalt layer grown on thick MoS₂ layer

Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS ₂ 2 ). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS ₂ 2 on the magnetic properties of the 10 nm Co layer. A comparative study on Co/MoS₂ Co / MoS 2 and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS ₂ 2 . The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS ₂ 2 as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS ₂ 2 layer. Furthermore, our results will help in developing next-generation spintronic devices.