Effects of Lattice Defect Types in Cuo Absorber Layer on the Solar Cell Performance

This study investigates the structural composition and performance optimization of an ultra-thin solar cell employing a layered architecture consisting of Al/TiO2/CdS/CuO/Au/glass.The TiO2 layer serves as the window layer with a wide energy gap of approximately 3.2 eV, followed by the CdS buffer layer with an energy gap of 2.4 eV, facilitating alignment between the window and absorption layers.The p-type CuO absorption layer, with an energy gap ranging from 1.21 to 1.51 eV, functions as the primary absorber.Numerical simulations conducted using SCAPS-1D software provide insights into the electrical characteristics and performance optimization of the solar cell.Results demonstrate that varying the thickness of the CuO absorption layer and the density of bulk defects significantly impact electrical properties, with an optimal thickness of 2 µm identified.Additionally, reducing the thickness of the CdS layer enhances conversion efficiency, fill factor, open circuit voltage, and short circuit current due to increased carrier penetration into the absorption layer, particularly for shorter wavelengths.Furthermore, the interplay between bulk and interface defects influences electrical parameters, with interface defects exerting a more pronounced effect on quantum efficiency.These findings offer valuable insights into enhancing the design and performance of solar cells through structural optimization and defect management strategies.