ESD Induced Irreversible Degradation Processes in the Semiconductor Devices

This paper considers physical processes related to the electrostatic discharge (ESD) inducing irreversible failure in the microelectronic devices. The human body model (HBM) destructive voltage evaluation method using the energy equivalence assumption is proposed in this work. This method allows estimating the integrated circuit <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">HBM</tex> rating by the known transmission line pulse (TLP) test result without performing an HBM test. Experimental data confirming the proposed evaluation method is provided.