Comparing the Effects of Process Variability in FinFETs and CNFETs

The technological scaling of transistors makes them more susceptible to faults, such as those caused by radiation effects and process variability. Faults related to process variability can cause circuits to operate outside their specification ranges. In most cases, simulations are used to analyze such effects, but simulations have high computational costs. This work aims to use the mathematical chaos theory to analytically estimate the effects caused by the manufacturing process variability in carbon nanotube field-effect transistors (CNFETs), measured by variations in the nanotube's diameter and the oxide's thickness. Finally, a comparison is made between CNFET and MOSFET technology with fin field-effect transistors (FinFETs), proving that MOSFET technology is more robust regarding power and delay and product power delay (PDP) in circuits.