Large Polarization of Hf₀.₅Zr₀.₅Oₓ Ferroelectric Film on InGaAs With Electric-Field Cycling and Annealing Temperature Engineering

Achieving ferroelectricity on high-speed, low-power III-V substrate is important for high-performance non-volatile devices, but was rarely studied. We systematically investigated the ferroelectric (FE) characteristic of Hf0.5Zr0.5Ox (HZO) metal/ferroelectric/ semiconductor (MFS) capacitors on InGaAs substrate over a wide annealing temperature region. Here, we achieved ferroelectricity even at a very low annealing temperature of 310 °C, which is ideal for a low thermal budget III-V process. Also, after 500 °C annealing and <tex-math notation="LaTeX">10^4 </tex-math> electric-field cycling, a 2Pr value of <tex-math notation="LaTeX">68~μ C </tex-math> /cm2 for HZO was achieved which is the highest among reported FE films on III-V substrates. FE characteristic of different annealing temperature was analyzed by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Both XRD and TEM analysis supported increased orthorhombic (o-) phase ratio as a result of higher annealing temperature and electric-field cycling, respectively. Our study on the integration of FE material and III-V substrate will be a pathway for future high-performance devices such as non-volatile radio-frequency switches and FeNAND.