This research reveals a breakthrough in p-type doping for β-Ga2O3, suggesting enhanced performance in heterojunction bipolar transistors and semiconductor devices.
Despite extensive research on unipolar β-Ga 2 O 3 semiconductor devices, the advancement of bipolar devices, particularly heterojunction bipolar transistors (HBTs), has been significantly hindered by the lack of reliable p-type doping in β-Ga 2 O 3 .
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Than et al. (2025) studied this question.
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