Abstract We explore light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells, employing electromagnetically induced transparency (EIT) in warm rubidium vapor.We conduct a comparative study of light storage performance under identical experimental conditions for these two cell types. Using a buffer-gas-filled cell resulted in approximately a tenfold improvement in memory efficiency and storage time compared to antirelaxation-coated cells.Moreover, we demonstrate that memory efficiency can be further enhanced by choosing a near-resonant EIT Λ-scheme over a resonant one. Our findings provide valuable insights for optimizing light storage, thereby contributing to the development of field-deployable quantum memories.
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Đujić et al. (2024) studied this question.
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