Ion migration as a tool to enhance the performance of perovskite CsPbBr3 γ-ray detectors

This is the authors' abstract. We don't add key points for this paper.

Abstract Uncontrolled ion migration has been well-known in perovskite-based semiconductor devices. Here, we show that instead of being detrimental, ion migration can be used to enhance the performance of perovskite CsPbBr₃ semiconductor gamma-ray detectors. Through deliberate application of electrical biasing, we actively control ion migration to modify the metal-CsPbBr₃ interface barrier height in devices with asymmetric electrodes. Ion migration plays a pivotal role in reducing bulk defects, as evidenced by the contact potential difference measurement, thermally stimulated current spectroscopy, and photoluminescence measurements. The evidence suggests that biasing-induced ion migration in CsPbBr₃ results in a reduction in electron traps. As a result, record-breaking performance of ⁵⁷Co gamma ray spectrum for CsPbBr₃ detector was achieved by intentionally biasing the detector. As biasing at elevated temperatures expedites ion migration, preconditioning the CsPbBr₃ crystals through reverse biasing is a promising strategy for enhancing their performance.