Europium Doped FeTiO3 Thin Films By RF Magnetron Sputtering Method for Spintronic Applications

Abstract Pure and doped Titanium dioxide TiO₂ thin film with Europium-iron was prepared by sol-gel method and deposited the thin film on a glass substrate by RF magnetron sputtering. The prepared sample was characterized by XRD, VSM, and dielectric properties for the analysis of structural, magnetic behavior, and chemical bonding, respectively. XRD shows the pure phase of FeTiO₃ at 6wt% to 10wt%. An increase in crystallite size is observed with the increase in dopant concentration. Crystallite size varied from 21nm to 26 nm with an increase in the dopant concentration. The dielectric constant and tangent loss showed normal dispersion behavior. VSM showed the Soft Ferromagnetic behavior. The decrease in saturation magnetization is associated with an increase in dislocations in FeTiO₃ thin films. This type of material is suitable for Spintronic devices.