A novel recessed-source negative capacitance gate-all-around tunneling field effect transistor for low-power applications

A recessed-source (RS) negative capacitance (NC) gate-all-around (GAA) tunneling field effect transistor (RS-NCGAATFET) was proposed to achieve low power consumption and high performance. An additional RS allowed easy control of the operation of the NCGAATFET by both lateral and vertical band-to-band tunneling. Furthermore, the RS enhanced the driving ability and capacitance characteristics of the transistor. A silicon–germanium (Si/Ge) heterojunction was used to further improve the driving ability. The direct current (DC) and capacitance characteristics of the RS-NCGAATFET were regulated and optimized by adjusting the volume of RS and the thickness of the ferroelectric layer. Sentaurus technology computer-aided (TCAD) design simulations demonstrated that at a subthreshold slope of 31.37 mV/decade, the RS-NCGAATFET achieved a switching current ratio of 107, along with a driving current of 8.31 μA, a transconductance of 3.76 × 10−5 S, and a threshold voltage of 0.30 V.