Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate

We evidently present the integration of ferroelectric Al <tex-math notation="LaTeX">_0.8 </tex-math> Sc <tex-math notation="LaTeX">_0.2N </tex-math> onto a (001)-oriented silicon (Si) substrate. Our AlScN film, having a thickness of 116 nm, shows a remnant polarization ( <tex-math notation="LaTeX">Pᵣ) </tex-math> exceeding <tex-math notation="LaTeX">124.5~μ C </tex-math> /cm2 and a coercive voltage of 71.9 V. Our ferroelectric Al <tex-math notation="LaTeX">_0.8 </tex-math> Sc <tex-math notation="LaTeX">_0.2N </tex-math> on Si demonstrates an endurance performance, surpassing <tex-math notation="LaTeX">1× 10^4 </tex-math> cycles under a stress of 75 V @ 100 kHz. The extrapolation of retention properties reveals that a substantial <tex-math notation="LaTeX">2Pᵣ </tex-math> over <tex-math notation="LaTeX">200~μ C </tex-math> /cm2 can be guaranteed for a duration over <tex-math notation="LaTeX">10^8 </tex-math> seconds at 300 K. Furthermore, the evaluation of the ratio of breakdown voltage to coercive voltage yields approximately 112% @ 300 K and 131% @ 500 K. These findings mark a critical advancement in the practical implementation of wurtzite ferroelectric field-effect transistor-structural memories and their high-density integration.