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January 1, 2025Acta Physica SinicaOpen Access

Resistive switching and negative differential resistance effect in Ag/BiFeO₃/Fe₂O₃/ITO structures with various thicknesses of Fe₂O₃ layer

SHU Haiyan 邱晓燕陈鹏 XIA Shuying ZHANG Xingwen QIU Xiaoyan Peng Chen

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Key Points

The Ag/BiFeO3/Fe2O3/ITO device exhibits a resistive switching ratio close to 10 with a 100 nm Fe2O3 layer.
At 0.56 V, the device shows a sharp increase in current, and switches back to high resistance state at -0.3 V.
The resistive switching is governed by ohmic conduction in low resistance state and SCLC in high resistance.
These characteristics, alongside negative differential resistance, are crucial for applications in resistive stochastic storage.

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Implication

Investigation of resistive switching and negative differential resistance in Ag/BiFeO3/Fe2O3/ITO devices, highlighting low switching voltage.

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Cite This Study

Haiyan et al. (2025) studied this question.

synapsesocial.com/papers/68eb8fe250220ac955d94c3e https://doi.org/10.7498/aps.74.20251004

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