Analysis reveals temperature-dependent electrical properties of VN thin films, indicating distinct behaviors based on crystallinity.
VN thin films were grown on MgO(001) substrates by pulsed laser deposition, and their structural and electrical properties were characterized. The films were grown at temperatures of 973 K, 773 K, and room temperature (R.T.) to change the crystallinity. X-ray diffraction analyses showed that the films grown at 973 and 773 K were crystallized whereas the film grown at R.T. was amorphous. The temperature dependence of the electrical resistivity of the films indicated that crystallized VN exhibited metallic behavior, whereas amorphous VN exhibited semiconductor behavior, which may be associated with Anderson localization.
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Tanabe et al. (2025) studied this question.
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