Abstract High‐brightness laser illumination faces crucial challenges in the development of color converters with efficient heat dissipation and luminous efficiency (LE). Herein, an innovative microstructure design of a phosphor‐in‐glass film (PiGF) coated on a sapphire color converter (M‐PiGF@S) is designed and prepared by adopting the hot‐press bonding and low‐temperature sintering strategies. By optimizing the PiGF thickness, the M‐PiGF@S (110 µm) converter enables a high‐luminance white light with a high luminous flux (LF) of 5877 lm under a maximum laser power density saturation threshold (LPD‐ST) of 39 W mm −2 , which is 179.5% of the traditional PiGF@S converter with a LF of 3274 lm@21 W mm −2 . Compared to the PiGF with double‐sided sapphires (S@PiGF@S), the maximum LF of M‐PiGF@S are increased by 13.72%, and it also demonstrates a higher overall LE level, with the maximum improvement reaching 16.86% under 7 W mm −2 . The research results have demonstrated that the new structure of the color converter has great potential for efficient and high‐brightness laser lighting.
Li et al. (2025) studied this question.