Structural stability, electrical and optical properties of chalcogen (O, S, and Te) doped tetragonal ZnSe monolayers under high pressure

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This is a Quantitative Study study.

Tian Runze; Tao Liu; Yuxuan Huang; Shixia Wang

doi:10.1039/d5cp00329f

January 1, 2025Physical Chemistry Chemical Physics

Structural stability, electrical and optical properties of chalcogen (O, S, and Te) doped tetragonal ZnSe monolayers under high pressure

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Key Points

Chalcogen doping alters the structural stability, influencing properties significantly under high pressure conditions.
The study demonstrates that the electrical properties of ZnSe monolayers change notably with different chalcogens like O, S, and Te.
Employing first-principles calculations, the research assesses how high pressure impacts both the optical and structural attributes.
These findings imply potential applications in semiconductor technology, highlighting the importance of doping strategies.

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Implication

Investigates structural, electrical, and optical properties of ZnSe under high pressure, suggesting performance variations with chalcogen doping.

Abstract

In this paper, the structural, electrical and optical properties of pure tetragonal ZnSe monolayers and chalcogen doped ZnSe monolayers have been investigated for changes under pressure based on the first-principles...

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Runze et al. (2025) studied this question.

synapsesocial.com/papers/68f19f20de32064e504ddd30 https://doi.org/10.1039/d5cp00329f

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Structural stability, electrical and optical properties of chalcogen (O, S, and Te) doped tetragonal ZnSe monolayers under high pressure

Key Points

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Implication

Abstract

Discussion

Cite This Study

Structural stability, electrical and optical properties of chalcogen (O, S, and Te) doped tetragonal ZnSe monolayers under high pressure

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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