Interface effects in molecular beam epitaxy of SrMnSb2 on InAs and GaSb: segregation and endotaxy

Q: What type of study is this?

This is a Experimental Study study.

Thomas J. Rehaag; Ethan D. N. Dommett; Zhuo Yu; Hsuan-Yin Lin; David Ironmonger; Yisong Han; Gavin R. Bell

doi:10.1039/d5lf00284b

January 1, 2025RSC Applied InterfacesOpen Access

Interface effects in molecular beam epitaxy of SrMnSb2 on InAs and GaSb: segregation and endotaxy

View Full Paper

Ask AI

Bookmark

Share

Key Points

Epitaxial growth of SrMnSb2 was successful on both InAs and GaSb substrates, highlighting versatility.
Significant findings include segregation effects and endotaxy during the growth process, observed using multiple techniques.
Analysis employed reflection high energy electron diffraction, X-ray photoemission spectroscopy, and electron microscopy for thorough investigation.
Findings suggest unique properties of SrMnSb2 that could enhance applications in advanced semiconductor devices.

Implication

Epitaxial growth of SrMnSb2 shows segregation and endotaxy on InAs and GaSb, indicating potential for advanced materials.

Abstract

Epitaxial growth of the topological semimetal SrMnSb2 is demonstrated using InAs and GaSb substrates. The growth is studied by reflection high energy electron diffraction, X-ray photoemission spectroscopy and electron microscopy....

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Rehaag et al. (2025) studied this question.

synapsesocial.com/papers/68f43ef4854d1061a58abd95 https://doi.org/10.1039/d5lf00284b

View Full Paper

Ask AI

Bookmark

Share

Interface effects in molecular beam epitaxy of SrMnSb2 on InAs and GaSb: segregation and endotaxy

Key Points

Implication

Abstract

Discussion

Cite This Study

Interface effects in molecular beam epitaxy of SrMnSb2 on InAs and GaSb: segregation and endotaxy

Key Points

Implication

Abstract

Discussion

Cite This Study

Keep reading

Keep reading