Extraction of transistor model parameters in uniform approximation

To the best our knowledge, this work is the first attempt of extraction of MOSFET parameters in the uniform (Chebyshev) approximation. The proposed optimization algorithm uses random descent with a random number generator whose probability density is best suited for the ravine structure of the objective function in such a way as to obtain a compromise between the probability of a successful attempt and the magnitude of the descent step. The proposed distribution reduces the descent time by two orders of magnitude compared to the uniform one. By replacing the root-mean-square approximation with a uniform one, the maximum error of the model can be significantly reduced, which improves the accuracy of the worst-case analysis of electronic circuits.