Prediction of failure initiation and fracture trajectory of an infinite plate weakened by an elliptical hole in thermoelectric material

Elliptical voids commonly form in semiconductor fabrication due to incomplete deposition, void migration or localized stress concentrations, acting as stress concentrators vulnerable to thermomechanical and thermoelectric effects that may compromise structural integrity. This study investigates the fracture behavior of thermoelectric materials containing elliptical voids under combined mechanical, thermal and electrical loading. Closed-form solutions for electric potential, temperature and stress fields are derived for arbitrary loading orientations and void aspect ratios. Based on the strain energy density criterion (S-criterion), both failure initiation and crack propagation trajectories can then be predicted in this study. Results indicate that loading conditions and void aspect ratios significantly impact fracture behavior. The S-criterion captures local crack initiation, while the full-field strain energy density contour plots provide a global perspective. Integrating local and global strain energy density distributions enables a precise prediction of complete fracture trajectories, providing a practical reference for engineers to guide defect-tolerant design, implement targeted reinforcement and enhance the reliability and operational durability of thermoelectric and semiconductor devices.