The Compact Model Synthesis for the RADFET Device

This article proposes a compact model for the radiation-sensitive field-effect transistor (RADFET). The model represents the basic I–V characteristics of the MOSFET device and includes the effects of threshold voltage shift as a function of absorbed dose and gate bias, gate tunneling current, gate radiation current, dose accumulation, and fading. It accurately represents high-field effects in the gate dielectric of the RADFET device. Both the Fowler–Nordheim gate tunneling current and the radiation-induced gate current are incorporated into the model. The model enables determination of the radiation-induced charge during RADFET operation under high-field injection conditions, thereby improving the precision of accumulated dose readout. The proposed model is fully compatible with SPICE-based circuit simulators and can represent any type of RADFET device, including those with high-k gate dielectrics. Furthermore, the model was developed entirely using open-source circuit simulation tools.