Review highlights advancements in spin qubits and quantum computing with nanowires and field effect transistors, suggesting novel approaches for integration.
Key Points
Spin qubit devices and field effect transistors are paving the way for advancements in quantum computing, enhancing scalability.
Key comparisons were made between bottom-up and top-down fabrication methods for nanowires, including core–shell and Ge hut wires.
Observational review explored fabrication challenges while showcasing the benefits of group IV materials for quantum applications.
Integration of nanowire architectures with CMOS aims to address challenges in achieving large-scale quantum technology.