Probing electron spin dynamics in single telecom InAs(P)/InP quantum dots using the Hanle effect

Spins of carriers confined in quantum dots (QDs) are promising candidates for qubits due to their relatively long spin relaxation times. However, the electron spin dephasing, primarily driven by hyperfine interactions with nuclear spins, can limit their coherence. Here, we report the Hanle effect demonstration in single InAs(P)/InP QDs emitting predominantly in the S-band, leading to experimental determination of electron spin dephasing time. Using polarization-resolved photoluminescence spectroscopy, we identified excitonic complexes and confirmed the presence of a negatively charged trion, exhibiting a degree of circular polarization of −36% under quasi-resonant excitation. From the analysis of Hanle linewidth and employing a previously reported value of the electron g-factor, we extracted an electron spin dephasing time of T2*=1.53 ± 0.68 ns. Despite the large indium nuclear spin, the obtained T2* is comparable to values reported for GaAs-based QDs, which we attribute to the larger volume of the InAs(P)/InP QDs. These findings confirm the potential of InP-based telecom QDs for use in spin–photon interfaces.