Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands

In this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode. The optimal impedance regions of the transistors are determined using harmonic load-pull techniques. An on-chip output matching network with second harmonic control functionality is designed to achieve Class-J operation. To verify the feasibility of designed circuits, both power amplifiers are designed and fabricated using a 0.25 mm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The power amplifiers are both biased at 6 V/−1 V. The measured results show the X-band and Ku-band power amplifiers achieve peak saturated output powers of 31.2 dBm and 30.8 dBm, respectively. The power-added efficiencies (PAEs) of the two amplifiers within their operating bands reach up to 48% and 45.3%, respectively. Compact size and high efficiency make them suitable for integration into phased array transmit/receiver (T/R) modules.