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Reports on quantum memory devices utilizing tunneling two-level systems, highlighting their confirmed existence and application.
Tunneling two-level systems (TLS) were proposed as an ad hoc explanation of the ubiquitous low-frequency (1/f) noise in solid-state devices. Now their existence and, in certain cases, quantum coherent behavior are confirmed by direct observation. The latter allowed the use of TLS within superconducting qubits as quantum memory devices.
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A. M. Zagoskin (2025) studied this question.
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