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Analysis reveals interlayer tunneling energy and capacitance in dual-gated graphene layers with boron nitride barriers, suggesting new electronic applications.
We investigate dual-gated double-monolayer graphene heterostructures, consisting of two twist-controlled graphene layers separated by atomically thin hexagonal boron nitride (hBN) tunnel barriers with various thicknesses, to determine the interlayer tunneling energy and capacitance of the hBN barriers. Because the two graphene layers' crystal axes are twist-aligned throughout fabrication, we observe energy and momentum conserving resonant tunneling characterized by gate-tunable negative differential resistance. We analyze the experimental data using a single-particle tunneling model and extract interlayer tunneling energy and capacitance as a function of the barrier thicknesses.
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Kenneth Lin (2025) studied this question.
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