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December 9, 2025Reports on Progress in Physics3 citationsOpen Access

Orbital topology induced orbital Hall effect in two-dimensional insulators

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YYYueh‐Ting YaoCCC.‐J. ChuABArun Bansil

Key Points

  • This research aims to explore orbital topology and the orbital Hall effect in two-dimensional insulators.
  • Introduction of the concept of orbital Chern insulators (OCIs) within a framework of orbital topology
  • Identification of monolayer blue phosphorene as a pure OCI
  • Characterization of topological boundary states in OCIs
  • Orbital Hall effect is observed to be entirely driven by orbital angular momentum
  • Establishment of OCIs as a new topological phase
  • OCI distinguishes its effects from traditional spin and valley Hall effects in insulating materials

Abstract

Abstract Studies of ground-state topology in quantum materials have revealed the discovery of topological phases with novel Hall responses. Recently, the orbital Hall effect has drawn growing attention; however, the hidden origin behind large orbital Hall conductivity in insulators remains elusive. Here, we introduce the concept of orbital Chern insulators (OCIs), a previously unexplored topological phase in which orbital angular momentum drives nontrivial topology and hosts the orbital Hall effect in insulating systems. We establish a comprehensive orbital-topology-based framework for systematically characterizing OCIs, and identify monolayer blue phosphorene, a material previously regarded as a trivial insulator, hosting the first pure OCI with robust topological boundary states. We demonstrate that OCI is entirely orbital driven, fully disentangled from the spin and valley degrees of freedom, resulting in an orbital Hall effect that can be experimentally distinguished from the spin and valley Hall effects in insulating materials. Our work suggests a new avenue for exploring orbital topology in materials and advancing orbitronics-based technologies.

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Cite This Study

Yao et al. (2025) studied this question.

synapsesocial.com/papers/69401efa2d562116f28f982chttps://doi.org/10.1088/1361-6633/ae2a68
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