Investigation shows improved energy storage performance in BaBi 4 Ti 4 O 15 films, indicating sol–gel method benefits.
BaBi 4 Ti 4 O 15 (BBT) lead‐free ferroelectric thin films were fabricated on Pt(111)/Ti/SiO 2 /Si substrates via sol–gel method, followed by systematic investigation of annealing temperature effects (575°C–675°C) on their crystalline evolution, microstructure, and energy storage characteristics. Elevating the annealing temperature to 650°C was observed to notably improve the crystalline quality of the deposited films and reduce oxygen vacancy concentration, as evidenced by microstructural characterization, thereby enhancing polarization properties and breakdown field strength. Excellent energy storage performance was achieved at 650°C with energy storage density of 18.4 J/cm 3 and energy storage efficiency of 67.34%. The results demonstrate that optimizing the annealing temperature significantly enhances the energy storage performance of BaBi 4 Ti 4 O 15 films across multiple perspectives, confirming annealing process optimization as an effective strategy to improve energy storage properties in ferroelectric materials.
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Wang et al. (2025) studied this question.
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