ABSTRACT With the continuous scaling and integration of semiconductor devices, the demand for advanced chemical‐mechanical polishing (CMP) has increased significantly. Consequently, the limitations of conventional abrasives have become increasingly evident, prompting a growing need for next‐generation slurries with improved material removal rates, surface roughness, defectivity, and selectivity. This review investigates the physicochemical properties of both ceria‐based and nonceria‐based nanoparticle abrasives and critically examines recent advances in their application to SiO 2 CMP. Emphasis is placed on understanding how these materials contribute to performance enhancement through chemical interactions, mechanical properties, and structural design. Our findings suggest that overcoming the limitations of the existing slurry systems may require a paradigm shift from relying on single‐component abrasives to engineering composite systems with complementary functionalities. Such integrated abrasive design strategies present a practical route toward more reliable and effective CMP solutions for future semiconductor fabrication.
Lee et al. (2025) studied this question.