Nickel-oxide hole-transport layers prevent abrupt reverse-bias breakdown and permanent shorting of perovskite solar cells caused by pinhole defects | Synapse
To evaluate the effectiveness of nickel-oxide hole-transport layers in preventing device failure in solar cells.
Utilized 30-nm-thick sputtered nickel oxide as hole-transport layers in perovskite solar cells
Assessed the impact on reverse-bias breakdown and thermal damage
Examined the effects of pinhole defects in solar cells.
Nickel oxide layers decreased instances of abrupt reverse-bias breakdown
Reduced permanent shorting in solar cells
Minimized severe thermal damage caused by defects.
Abstract
30-nm-thick sputtered nickel oxide hole-transport layers decrease the likelihood of abrupt reverse-bias breakdown, permanent shorting, and severe thermal damage in perovskite solar cells.