Non-stoichiometric design for engineering oxygen vacancies and enhanced ionic transport in Cu–Mg-doped bismuth vanadate electrolytes

Key Points

• The research aims to engineer oxygen vacancies in Cu–Mg-doped bismuth vanadate electrolytes to improve ionic conductivity.
• Developed a lattice-engineering strategy via non-stoichiometric design.
• Modulated oxygen vacancies in solid electrolyte materials.
• Shortened ion-hopping distances to enhance transport efficiency.
• Enhanced low-temperature ionic conductivity observed in modified electrolytes.
• Modulation of oxygen vacancies significantly improved ionic transport properties.