The electronic structures of β-phase (AlxGa1-x)2O3 studied by DFT calculations

Ziqian Sheng; Wenjing Xu; Xiaoqing Zhou; Cien Liu; Alexander Y. Polyakov; Zhilai Fang; Ning Jia; Xiangyu Xu; Kwang Young Kim

doi:10.1039/d5cp03996g

January 1, 2026Physical Chemistry Chemical Physics

The electronic structures of β-phase (AlxGa1-x)2O3 studied by DFT calculations

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Key Points

This research aims to investigate the electronic structures of β-phase (AlxGa1-x)2O3 for applications in power electronics.
Conducted density functional theory (DFT) calculations on β-phase (AlxGa1-x)2O3
Analyzed band gap variations due to alloying Al2O3 and Ga2O3
Assessed potential applications in power electronics and transistors
Findings indicate an expanded accessible bandgap through alloying with aluminum
Demonstrated improvements in electronic performance for power applications
Identified composition-dependent characteristics that enhance high electron mobility

Implication

DFT calculations evaluate band gap engineering in semiconductors, suggesting potential for electronics.

Abstract

Band gap engineering by alloying Ga2O3 with Al2O3 can expand the accessible bandgap for power electronics and high electron mobility transistor. For such applications, it is important to known the...

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Cite This Study

Sheng et al. (2026) studied this question.

synapsesocial.com/papers/696719be0042a3ed5427d7dd https://doi.org/10.1039/d5cp03996g

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The electronic structures of β-phase (AlxGa1-x)2O3 studied by DFT calculations

Key Points

Implication

Abstract

Discussion

Cite This Study

The electronic structures of β-phase (AlxGa1-x)2O3 studied by DFT calculations

Key Points

Implication

Abstract

Discussion

Cite This Study

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