The promising efficiency of 24.86% with V OC = 0.94 V, J SC = 31.98 mA cm −2 , and FF = 83.09% is obtained for the proposed FTO/SnS 2 /Sb 2 Se 3 /SnS/Au photovoltaic structure with SnS BSF layer at thickness of 0.2 µm and doping of 10 20 cm −3 .
Towhid Adnan Chowdhury (Thu,) studied this question.